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2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor (Motor, Relay drive) (6010V, 2A)
2SD2212 / 2SD2143 / 2SD1866
Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.
External dimensions (Unit : mm)
2SD2212
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
ROHM : MPT3 EIAJ : SC-62
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO IC 2SD2212 6010 6010 6 2 3 0.5 2 1 10 1 Tj Tstg 150 -55 to +150
3
2.3
V V V A (DC) A (Pulse) W W
(1)
0.9
0.75
Symbol
Limits
Unit
2SD2143
0.4
5.5
1.5
(2)
0.9
(3) 2.3 0.65
Collector current
1
2
Collector power dissipation
2SD2143
PC
1.0
0.5
2SD1866 Junction temperature Storage temperature
W
C C
0.5
1.5 2.5 9.5
2.3
W (Tc=25C)
0.8Min.
5.1
C0.5
1 Single pulse Pw=100ms 2 When mounted on a 40x40x0.7mm ceramic board. 3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
ROHM : CPT3 EIAJ : SC-63
Packaging specifications and hFE
Type
Package hFE
2SD1866
2SD1866 ATV 1k to 10k - TV2 2500
0.65Max.
6.8
2.5
2SD2212 MPT3 1k to 10k DR T100 1000
2SD2143 CPT3 1k to 10k - TL 2500
Marking
Code Basic ordering unit (pieces)
1.0
0.9
0.5
Equivalent circuit
C
(1)
(2) 2.54
(3) 2.54 1.05 0.45
Taping specifications
14.5
4.4
B R1 E : Emitter B : Base C : Collector
R1 R2
ROHM : ATV
R2 E
3.5k 300
Rev.A
6.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
(1) Emitter (2) Collector (3) Base
1/3
2SD2212 / 2SD2143 / 2SD1866
Transistors
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio
Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob
Min. 50 50 - - - 1000 - -
Typ. - - - - - - 80 25
Max. 70 70 1.0 3 1.5 10000 - -
Unit V V A mA V - MHz pF IC=50A IC=5mA VCB=40V VEB=5V IC/IB=1A/1mA
Conditions
Transition frequency Output capacitance
Measured using pulse current.
VCE=2V, IC=1A VCE=5V, IE= -0.1A, f=30MHz VCB=10V, IE=0A, f=1MHz
Electrical characteristics curves
2.0 1.8
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2
A 300
250
A
0 25
A
A 200 IB=
COLLECTOR CURRENT : Ic (A)
500A 450A 400A
Ta=25C
2.0
500A
1.8 450A
400A 1.6 350A
0 30
A
Ta=25C
5
VCE=2V
2 1 0.5
100 C
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
00A IB=2
0.2 0.1 0.05
25C
0.01
3
4
5
2
4
6
8
10
0.001 0.5
1
1.5
-25C
Ta=
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Groundede emitter output characteristics ( )
Fig.2 Grounded emitter output characteristics ( )
Fig.3 Grounded emitter propagation characteristics
10000 5000
DC CURRENT GAIN : hFE
Ta=25C VCE=4V
10000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
5000
DC CURRENT GAIN : hFE
VCE=2V
100 50 20 10 5 2
IC/IB=1000
Ta=25C
2000 1000 500 200 100 50 20 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10
VCE=2V
2000 1000 500 200 100 50 20 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10
=1 00 C
25C
Ta 5 C
-2
1 0.5 0.2
500
0.01
0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current
Rev.A
2/3
2SD2212 / 2SD2143 / 2SD1866
Transistors
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
IC/IB=1000
200 100
COLLECTOR CURRENT : Ic (A)
Ta=25C IE=0A f=1MHz
10 5 2 1 500m 200m 100m 50m 20m 10m 5m
Ta=25C Single
50 20 10
5 2 1
100C
Ic max (pulse)
Pw =1
mS =1 S Pw 0m =1 Pw
00
m
S
50
D C
Ta= -25C
20
0.5 0.2
10
25C
0.01
0.1 0.2 0.5 1
2
5 10
5 0.05 0.1 0.2
0.5
1
2
5
10 20
50
2m Nonrepetitive 1m Pulse 0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector-emitter saturation voltage vs. collector current
Fig.8 Collector output capacitance vs. collector-base voltage
Fig.9 Safe operating area (A. S. O) 2SD2212 (MPT)
10 5
10
COLLECTOR CURRENT : Ic (A)
Ic max (pulse)
DC
Pw
5
Pw=
COLLECTOR CURRENT : Ic (A)
Ic max (pulse)
=1 Pw
2 1 500m 200m 100m 50m 20m 10m 5m
2 1 500m 200m 100m 50m 20m 10m 5m
Pw
DC
1mS
0 =1
mS
Pw
=1 00 m S
0 =1 0m
mS
Pw =1 0m S
S
2m 1m 0.1 0.2 0.5 1 2
Ta=25C Single Nonrepetitive Pulse
5 10 20
50 100 200 500 1000
2m 1m 0.1 0.2 0.5 1 2
Ta=25C Single Nonrepetitive Pulse When mounted on 1.7mm thick PCB having collector plating area 1cm2or larger.
5 10 20
50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (A. S. O) 2SD2143 (CPT)
Fig.11 Safe operating area (A. S. O) 2SD1866 (ATV)
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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